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BUP 200
IGBT Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 G Type BUP 200 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code Q67078-A4400-A2 Pin 3 E
VCE
IC
Package TO-220 AB
1200V 3.6A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 3.6 2.4
TC = 25 C TC = 90 C
Pulsed collector current, tp = 1 ms
ICpuls
7.2 4.8
TC = 25 C TC = 90 C
Avalanche energy, single pulse
EAS
3.5
mJ
IC = 1.5 A, VCC = 50 V, RGE = 25 L = 3.3 mH, Tj = 25 C
Power dissipation
Ptot
50
W -55 ... + 150 -55 ... + 150 C
TC = 25 C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-06-1995
BUP 200
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance IGBT thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC
3.1
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.8 3.8 4 1 0.1 6.5 3.3 4.3 4.5
V
VGE = VCE, IC = 0.1 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 1.5 A, Tj = 25 C VGE = 15 V, IC = 1.5 A, Tj = 125 C VGE = 15 V, IC = 1.5 A, Tj = 150 C
Zero gate voltage collector current
ICES
25 100
A
VCE = 1000 V, VGE = 0 V, Tj = 25 C VCE = 1000 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
100
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
0.6 225 25 13 -
S pF 320 40 24
VCE = 20 V, IC = 1.5 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Dec-06-1995
BUP 200
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit
ns 30 50
VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100
Rise time -
tr
20 30
VCC = 600 V, VGE = 15 V, IC = 1.5 A RGon = 100
Turn-off delay time
td(off)
170 250
VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100
Fall time
tf
15 25 mWs 0.25 -
VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100
Total turn-off loss energy
Eoff
VCC = 600 V, VGE = -15 V, IC = 1.5 A RGoff = 100
Semiconductor Group
3
Dec-06-1995
BUP 200
Power dissipation Ptot = (TC) parameter: Tj 150 C
55 W
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
3.6 A
Ptot
45 40 35 30 25 20
IC
2.8 2.4 2.0 1.6 1.2
15 0.8 10 5 0 0 20 40 60 80 100 120 C 160 0.4 0.0 0 20 40 60 80 100 120 C 160
TC
TC
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 1
t = 4.5s p
10 s
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1
IGBT
A
K/W
IC
100 s
ZthJC
10
0
10 0
1 ms
D = 0.50
10 ms
0.20 10
-1
10
-1
0.10 0.05 0.02
DC
single pulse
0.01
10 -2 0 10
10
1
10
2
10
3
V
10 -2 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VCE
tp
Semiconductor Group
4
Dec-06-1995
BUP 200
Typ. output characteristics
Typ. transfer characteristics
IC = f(VCE)
parameter: tp = 80 s, Tj = 125 C
IC = f (VGE)
parameter: tP = 80 s, VCE = 20 V, Tj = 25 C
Typ. saturation characteristics
Typ. saturation characteristics
VCE(sat) = f (VGE)
parameter: Tj = 25 C
VCE(sat) = f (VGE)
parameter: Tj = 125 C
Semiconductor Group
5
Dec-06-1995
BUP 200
Typ. gate charge VGE = (QGate) parameter: IC puls = 1 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
VGE
16 14
400 V
12 10 8 6 4 2 0 0 4 8 12 16 20 24
800 V
nC
32
Q Gate
Semiconductor Group
6
Dec-06-1995
BUP 200
Package Outlines Dimensions in mm Weight: 8 g
Semiconductor Group
7
Dec-06-1995

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